j an, 2009 ? version 4.3 n-channel enhancement mode mosfet ME75N80C(-g) 01 a. pulse width limited by safe operating area b. starting tj=25 , id=30a, vdd=37.5v parameter symbol limit unit drain-source voltage v dss 80 v gate-source voltage v gss 20 v t c =25 75 continuous drain current t c =100 i d 60 a pulsed drain current a i dm 300 a source-drain current i sd 75 a t c =25 75 power dissipation t a =25 p d 4 w operating junction and storage temperature range t j, t stg -55 to 175 avalanche energy with single pulse b e as 400 mj tQ10 sec 7.3 thermal resistance-junction to ambient * r ja steady state 37 thermal resistance-junction to case r jc 2 /w v ds =80v r ds(on) , vgs@10v,ids@40a = 11m features minimize input capacitance and gate charge specially designed for dc/dc converters and dc motor control pin configuration (to-220) top view absolute maximum ratings (t c =25 unless otherwise noted) e ordering information : me75n80ed (pb-free) me75n80ed-g (green product-halogen free)
j an, 2009 ? version 4.3 n-channel enhancement mode mosfet ME75N80C(-g) 02 symbol parameter limit min typ max unit static bv dss drain-source breakdown voltage v gs =0v, i d =250 a 80 v v gs(th) gate threshold voltage v ds =v gs , i d =250 a 4.0 6.5 v i gss gate-body leakage v gs =20v 100 na i dss zero gate voltage drain current v ds =max rating, v gs =0v 1 a r ds(on) drain-source on-resistance* v gs =10v, i d =40a 8.5 11 m g fs forward transconductance* v ds =15v, i d =40a 10 s v sd diode forward voltage * i sd =25a, v gs =0v 1.5 v dynamic qg total gate charge 120 qgs gate-source charge 54 qgd gate-drain charge v dd =60v, v gs =10v, i d =75a 38 nc rg gate resistance f=1mhz 2.3 c iss input capacitance 7400 c oss output capacitance 450 c rss reverse transfer capacitance v ds =20v, v gs =0v, f=1mhz 140 pf t d(on) turn-on delay time 80 t r turn-on rise time 37 t d(off) turn-off delay time 140 t f turn-off fall time v gs =10v, r l =15 v dd =30v, r g =10 27 ns electrical characteristics notes: a. pulse test: pulse width Q 300us, duty cycle Q 2%,guaranteed by design, not subject to production testing. b. matsuki reserves the right to improve product design, functions and re liability without notice.
j an, 2009 ? version 4.3 n-channel enhancement mode mosfet ME75N80C(-g) 03 typical characteristics (t j =25 noted)
j an, 2009 ? version 4.3 n-channel enhancement mode mosfet ME75N80C(-g) 04 typical characteristics (t j =25 noted)
j an, 2009 ? version 4.3 n-channel enhancement mode mosfet ME75N80C(-g) 05 millimeters (mm) symbol min max a 3.500 4.90 a1 1.000 1.40 a2 2.000 3.00 b 0.500 1.00 c 0.350 0.65 d 14.00 16.50 d1 8.382 9.017 d2 12.00 13.00 e 9.600 10.70 e1 6.858 8.890 e 2.540 bsc h1 5.500 7.50 l 12.50 15.00 p 3.810 3.860 q 2.540 3.048 b2 1.100 1.80 l1 - 7.00 to-220 packa g e outline
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